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MICROSYSTEMS MICROSYS 200
    설명
    설명 없음
    환경 설정
    Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"
    OEM 모델 설명
    Plasma Enhanced CVD system (PECVD)
    문서

    문서 없음

    MICROSYSTEMS

    MICROSYS 200

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    검증됨

    카테고리
    PECVD

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보
    조건:

    Used

    작동 상태:

    알 수 없음

    제품 ID:

    97600

    웨이퍼 사이즈:

    4"/100mm

    빈티지:

    알 수 없음

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    MICROSYSTEMS MICROSYS 200

    MICROSYSTEMS

    MICROSYS 200

    PECVD
    빈티지: 0조건: 중고
    마지막 검증일60일 이상 전

    MICROSYSTEMS

    MICROSYS 200

    verified-listing-icon
    검증됨
    카테고리
    PECVD
    마지막 검증일: 60일 이상 전
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/eb6f5554ff2445c59ba4a1ecac66a231_a98d6d42000c41e1868d340e6ab13fa81201a_mw.jpeg
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/a7dad8ae332047688913ba9be4095027_55ace7ffdc6348bbb26b863ef47e085f_mw.jpeg
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/0b3a9013ef20494ab11c5c358d32232a_3227b227de3a4f37ba9f4ee5d2a36ca21201a_mw.jpeg
    listing-photo-4469181d504148778026584238b8b97a-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/54225/4469181d504148778026584238b8b97a/157a70c16b514a92bff0673bd9d36271_675890a773c547bb9961d01cf0f442a71201a_mw.jpeg
    주요 품목 세부 정보
    조건:

    Used

    작동 상태:

    알 수 없음

    제품 ID:

    97600

    웨이퍼 사이즈:

    4"/100mm

    빈티지:

    알 수 없음

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    설명 없음
    환경 설정
    Plasma Enhanced CVD system (PECVD) Deposition of SiO2, Si3N4 and a-Si RF power: 0-400 W ICP power: 0-1300 W Temperatures: RT to 300°C Gases available: Ar, SiH4, NH3, N2, O2, NF3, N2O He for substrate heat transfer Maximum wafer size: 4"
    OEM 모델 설명
    Plasma Enhanced CVD system (PECVD)
    문서

    문서 없음

    유사 등재물
    모두 보기
    MICROSYSTEMS MICROSYS 200

    MICROSYSTEMS

    MICROSYS 200

    PECVD빈티지: 0조건: 중고마지막 검증일:60일 이상 전