설명
NANO PROBER환경 설정
NANO PROBEROEM 모델 설명
Model N-6000, which was co-developed by Renesas Technology Corp. and Hitachi, Ltd., has six tungsten manipulation-probes mounted on SEM (scanning electron microscope), each of which has a point with a 50-nm radius. Manipulation-probes on Model N-6000 can directly touch the contacts that lead to components of transistors: source, drain, gate, substrate, etc. Model N-6000 can directly measure metal-oxide semiconductor characteristics, like small current leaks, threshold voltage shifts, contact resistances, etc. Model N-6000 makes a bridge between logical electrical characterization and physical characterization, and helps failure locations to be identified. It dramatically improves the efficiency of failure analysis.문서
문서 없음
HITACHI
N-6000
검증됨
카테고리
Probers
마지막 검증일: 3일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
111874
웨이퍼 사이즈:
알 수 없음
빈티지:
2007
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
HITACHI
N-6000
카테고리
Probers
마지막 검증일: 3일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
111874
웨이퍼 사이즈:
알 수 없음
빈티지:
2007
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
NANO PROBER환경 설정
NANO PROBEROEM 모델 설명
Model N-6000, which was co-developed by Renesas Technology Corp. and Hitachi, Ltd., has six tungsten manipulation-probes mounted on SEM (scanning electron microscope), each of which has a point with a 50-nm radius. Manipulation-probes on Model N-6000 can directly touch the contacts that lead to components of transistors: source, drain, gate, substrate, etc. Model N-6000 can directly measure metal-oxide semiconductor characteristics, like small current leaks, threshold voltage shifts, contact resistances, etc. Model N-6000 makes a bridge between logical electrical characterization and physical characterization, and helps failure locations to be identified. It dramatically improves the efficiency of failure analysis.문서
문서 없음