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SSM 495
  • SSM 495
  • SSM 495
  • SSM 495
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OEM 모델 설명
The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.
문서

문서 없음

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검증됨

카테고리
Probers

마지막 검증일: 30일 이상 전

주요 품목 세부 정보

조건:

Used


작동 상태:

알 수 없음


제품 ID:

130353


웨이퍼 사이즈:

6"/150mm


빈티지:

2000


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

SSM

495

verified-listing-icon
검증됨
카테고리
Probers
마지막 검증일: 30일 이상 전
listing-photo-a3a2a3e2bcdf4798b886f4fc4f0890c0-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
주요 품목 세부 정보

조건:

Used


작동 상태:

알 수 없음


제품 ID:

130353


웨이퍼 사이즈:

6"/150mm


빈티지:

2000


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음
환경 설정
환경 설정 없음
OEM 모델 설명
The SSM 495 is an automatic mapping system that provides a variety of electrical characterization measurements for non-patterned wafers used in epitaxial silicon and front-end semiconductor process development and production. It is capable of monitoring a wide range of parameters, including low-k dielectric materials, epi resistivity, defect density, ion implant dose, metallic contamination, oxide quality, interlayer dielectric quality, gate oxide integrity, high and low k dielectric development, and threshold voltage. The advanced mercury probe used in the SSM 495 provides a stable and reproducible electrical contact, eliminating the need for slow and expensive lithography and metallization steps. Additionally, the unique patented mercury probe allows the wafer to be placed face up, eliminating contamination and damage caused by traditional face-down mercury probe systems. This system is ideal for monitoring various aspects of semiconductor production and development.
문서

문서 없음