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TEGAL 901E
    설명
    The 901e system was upgraded to run 6" wafers and a windows pc based control system. It was fully working when disconnected in March 2014. Tool is shut down and stored in old clean room area.
    환경 설정
    환경 설정 없음
    OEM 모델 설명
    The Tegal 901e is an inline RIE/plasma production etcher for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and CF4. The Tegal 901e plasma etcher is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated at an appropriate time, the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.
    문서

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    TEGAL

    901E

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    검증됨

    카테고리
    RIE

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    19747


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    알 수 없음

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    TEGAL 901E

    TEGAL

    901E

    RIE
    빈티지: 0조건: 중고
    마지막 검증일60일 이상 전

    TEGAL

    901E

    verified-listing-icon
    검증됨
    카테고리
    RIE
    마지막 검증일: 60일 이상 전
    listing-photo-OjJ6xpy1KIhYJDeRN1uk2v0dEl57CNGhrFAi0bXgNjA-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/y1P9WXZkntu4Yevu39nLhrICPppsa2FzqlgHWed8LkQ/OjJ6xpy1KIhYJDeRN1uk2v0dEl57CNGhrFAi0bXgNjA/svqeCcWAZwtVwqgVQlpPf4XzRliVOhYpLXzJxo1mjME_20190816_092125_f
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    listing-photo-OjJ6xpy1KIhYJDeRN1uk2v0dEl57CNGhrFAi0bXgNjA-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/y1P9WXZkntu4Yevu39nLhrICPppsa2FzqlgHWed8LkQ/OjJ6xpy1KIhYJDeRN1uk2v0dEl57CNGhrFAi0bXgNjA/WErrgTS6wyVFmU3aBdWti_kReCupO-mv4Sp6DxwYBdM_20190816_092125_f
    listing-photo-OjJ6xpy1KIhYJDeRN1uk2v0dEl57CNGhrFAi0bXgNjA-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/y1P9WXZkntu4Yevu39nLhrICPppsa2FzqlgHWed8LkQ/OjJ6xpy1KIhYJDeRN1uk2v0dEl57CNGhrFAi0bXgNjA/yZw27O8XJeDhqgE56hEZ0QY5oWncVbiQ_LsdDyiD7hs_20190816_092125_f
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    19747


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    알 수 없음


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    The 901e system was upgraded to run 6" wafers and a windows pc based control system. It was fully working when disconnected in March 2014. Tool is shut down and stored in old clean room area.
    환경 설정
    환경 설정 없음
    OEM 모델 설명
    The Tegal 901e is an inline RIE/plasma production etcher for six-inch wafers. It is a single-wafer, cassette-to-cassette driven tool with easy-to-use menu control and a 13.56 MHz RF Generator. The input gases are controlled by MFC, with up to 4 MFCs in the system. This tool implements multi-step etch recipes using multiple process gases and has been optimized for specific etches of specific films. Gases available in this configuration are N2, O2, SF6, CHF3, and CF4. The Tegal 901e plasma etcher is used by the semiconductor industry for integrated circuit fabrication. It is an industry standard in single-wafer dry etch of silicon nitride, polysilicon, amorphous silicon, and silicon oxide. Wafers are transported to a reaction chamber utilizing a non-friction spatula wafer transport mechanism. A gas mixture is introduced into the Reaction Chamber and becomes reactive by the application of radio frequency (RF) electromagnetic radiation. The reactive mixture, or plasma, etches away material that is not covered by the masking photoresist. The etch process is terminated at an appropriate time, the wafer is unloaded from the reaction chamber, and a new wafer is introduced repeating the cycle until all wafers have been processed.
    문서

    문서 없음

    유사 등재물
    모두 보기
    TEGAL 901E

    TEGAL

    901E

    RIE빈티지: 0조건: 중고마지막 검증일: 60일 이상 전
    TEGAL 901E

    TEGAL

    901E

    RIE빈티지: 0조건: 중고마지막 검증일: 60일 이상 전
    TEGAL 901E

    TEGAL

    901E

    RIE빈티지: 1998조건: 중고마지막 검증일: 19일 전