설명
RTP환경 설정
RTPOEM 모델 설명
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.문서
문서 없음
MATTSON
MILLIOS
검증됨
카테고리
RTP/RTA
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
75626
웨이퍼 사이즈:
12"/300mm
빈티지:
2011
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
MATTSON
MILLIOS
카테고리
RTP/RTA
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
75626
웨이퍼 사이즈:
12"/300mm
빈티지:
2011
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
RTP환경 설정
RTPOEM 모델 설명
The Millios is based on proprietary water-wall argon arc lamp technology. The system design monitors and controls wafer front-side and backside temperature in real time. The system has excellent wafer temperature control capabilities, including unique millisecond anneal pulse duration adjustment capability and integrated spike anneal-flash millisecond anneal process capability. It can meet technical requirements of millisecond anneal process and effectively manage wafer thermal stress to avoid wafer breakage issues at the same time. The Millios is the best technical solution for ultra-shallow-junction formation, high-k materials passivation and metal silicide formation processes in advanced transistor fabrication. It is also applicable for other materials surface anneal processes.문서
문서 없음