설명

The AG Associates Heatpulse4100S rapid thermal anneal system contains a subsystem for each of the following: • Electronics (including a dedicated microprocessor) • Mass-flow-controlled gas handling • Cooling • ULPA filtration • Mechanical assemblies Software programs, called recipes, specify the details for each process. The AG Associates Heatpulse 4100S system includes a 3-1/2-inch floppy disk drive for process recipe storage. A three-axis industrial robot automates processing by transporting wafers into and out of the process chamber. It uses closed-loop feedback for precise motion control and accurate positioning. To provide cold-wall processing, water is circulated through the process-chamber walls. The quartz isolation tube is cooled with nitrogen or compressed air. AG Associates Heatpulse 4100S Rapid Thermal Anneal equipment APPLICATIONS: The Heatpulse 4100S system is a versatile tool which can be useful for many applications, such as (but not limited to): • Silicon dielectric growth • Implant annealing • Glass re-flow • Titanium compound materials annealing • Nitridation of metals • Contact alloying AG Associates Heatpulse 4100S Utility Requirements Power StandardWater Type Refer to the Heatpulse® 4100 Facilities Manual.(Recirculator) Domestic: 208 VAC, 60 Hz; 125 A maximum;3-phase plus ground and neutral European: 400 VAC, 50 Hz; 90 A maximum;3-phase plus ground and neutral Japanese: 200 VAC, 50/60 Hz, 125 A maximum; 3-phase plus ground

환경 설정

The following are the operating specifications for the Heatpulse® 4100S system. Wafer handling: automatic serial processing, using standard cassettes. Throughput: Process dependent, approximately 80 wafers per hour (in a null cycle) without flat-finder. Stainless Chamber Wafer sizes: 3 inches, 4 inches, 5 inches, 6 inches (standard). Ramp-up rate: Programmable, 1 – 180°C per second. Steady-state duration: 1 – 600 seconds per step. Ramp-down rate: Programmable, 1 – 180°C per second. Ramp-down rate is temperature and radiation dependent, maximum 150°C per second. Recommended steady-state temperature range: 400 – 1200°C. ERP temperature accuracy: +5°C to -9°C, when calibrated against an instrumented thermocouple wafer (ITC). Temperature repeatability: + 7°C or better at 1150°C wafer to wafer. (Repetition specifications are based on a 100-wafer set.) Temperature uniformity: + 10°C across an 6-inch wafer at 1150°C. (This is a 1-sigma deviation from 100-angstrom oxide uniformity.) For a titanium silicidation process, no more than 1.5 percent increase to uniformity during the first anneal at 650 – 700°C.