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THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450
    설명
    설명 없음
    환경 설정
    Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
    OEM 모델 설명
    The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
    문서

    문서 없음

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

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    검증됨

    카테고리
    SEM / FIB

    마지막 검증일: 26일 전

    주요 품목 세부 정보

    조건:

    Refurbished


    작동 상태:

    알 수 없음


    제품 ID:

    117461


    웨이퍼 사이즈:

    알 수 없음


    빈티지:

    알 수 없음


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    SEM / FIB
    빈티지: 0조건: 개조됨
    마지막 검증일26일 전

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    verified-listing-icon
    검증됨
    카테고리
    SEM / FIB
    마지막 검증일: 26일 전
    listing-photo-431d162e6c7a4823a8a36545a8294c65-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Refurbished


    작동 상태:

    알 수 없음


    제품 ID:

    117461


    웨이퍼 사이즈:

    알 수 없음


    빈티지:

    알 수 없음


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    설명 없음
    환경 설정
    Process Type: FA SEMs/TEMs/Dual Beams Specifications: Electron Source – TFE Elstar electron column with UC monochromator Ion Source – Tomahawk • Landing Voltage – 50 V - 30 kV SEM – 500 V - 30 kV FIB • STEM resolution – 0.8 nm • SEM resolution – Optimal WD 0.8 nm @ 15 kV 0.8 nm @ 2 kV 0.9 nm @ 1 kV 1.5 nm @ 200 V with beam decleration – Coincident WD 0.8 nm @ 15 kV 0.9 nm @ 5 kV 1.2 nm @ 1 kV • Ion beam resolution at coincident point – 4.5 nm @ 30 kV using preferred statistical method – 2.5 nm @ 30 kV using selective edge method • EDS resolution – < 30 nm on thinned sample • Stage – 5 axis all piezo motorized – 100 mm XY motion – Loadlock (80 mm max. diameter) – Omniprobe • Sample types – Wafer pieces, packaged parts, TEM – grids, whole wafers up to 100 mm • Max. sample size – 80 mm diameter with full travel • User interface – Windows® GUI with integrated SEM, FIB, GIS, and simultaneous patterning and imaging mode • GIS – available and on request • Lift out – Omniprobe 200.2
    OEM 모델 설명
    The FEI Helios NanoLab 450 is a DualBeam™ system designed for imaging, analysis, and TEM sample preparation in semiconductor failure analysis labs. It is intended for advanced semiconductor labs that face various challenges, such as decreasing dimensions at sub 32-nm nodes, advanced packaging methods, and an increased number of samples that require TEM imaging. The Helios NanoLab series combines the Elstar electron column with UC technology for high-resolution and high-contrast imaging and the TomahawkTM ion column for quick and accurate sample cross-sectioning. The Helios NanoLab 450S is well-suited for high throughput and high-resolution S/TEM sample preparation, imaging, and analysis. Its unique FlipStage and in-situ STEM detector can switch from sample preparation to STEM imaging in seconds without breaking the vacuum or exposing the sample to the environment.
    문서

    문서 없음

    유사 등재물
    모두 보기
    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS HELIOS NANOLAB 450

    THERMOFISHER SCIENTIFIC / FEI / PHILLIPS

    HELIOS NANOLAB 450

    SEM / FIB빈티지: 0조건: 개조됨마지막 검증일:26일 전