
설명
Features: Wafer and substrate sizes up to 6". Higher yield using the local clean room concept. Vacuum down to 5x10e-5 mbar. Overpressure up to 3 bar absolute. Bonding in controlled environment. Flexible process control using Windows NT with data recording and analysis. Optimized bonding routines can be replicated. Dimensions And Weights: L*W*H: 1200 mm×625 mm ×1399 mm(47.2in*24.6in*55.1in) Weight: 339 Kg (747.4Lb.)환경 설정
In the basic configuration, the SB6+ VAC substrate bonder includes the following components: Basic machine with pneumatic,machine control and PC. A loading slide to hold the substrate transport fixture for secured loading process.The loading gate lid is kept small,thus contamination in the chamber is reduced to a minimum. A process chamber with integrated handling system for shift-free transfer of the substrate stack. The motorized Z drive allows different bonding sequences. Facility connections: Depending on the configuration of the SB6+, the following facilities are or may be required: Power Supply: 208-230 VAC, 50/60Hz, 20A, P=4200 W Outlet location accessible and within 12 feet of machine Compressed Air: P=6-10 bar, oil-free, dry, dust-free: particles>40 um Consumption: 16.7 slpm(0.6 scfm) maximum Tube: outer diameter 8 mm (5/16") Vacuum: P=90-95mbar, optional for pressure bonding Consumption:16.7 slpm (0.6 scfm) maximum Tube: outer diameter 8 mm (5/16") Nitrogen: N2 Consumption: 8.4 slpm (0.3 scfm) maximum P=102.9-110.3 psig, Oil-free, dry, dust-free: particles >40 um Tube: outer diameter 8 mm (5/16") Exhaust: Tube: outer diameter 50.8 mm (2") heat resistant up to 350 ℃ Requirement: 10.6 cfm, 0.21 mBar Environmental Requirements: Vibration-free room Clean room better than class 100 Room temperature between 20 and 22℃ Humidity between 40 and 45% Distance to wall: 10 cm(3.9 in); To other machines: 30 cm(11.8 in)OEM 모델 설명
The SB8e and the SB6e (SB8e/6e) represent the latest generation technology in substrate bonders offering precision performance and flexibility in a user-friendly, high-quality package. The newly designed and enhanced SB8e/6e are semi-automatic, computer-controlled systems with both vacuum- and pressurecontrolled atmosphere capability featuring an ergonomic load/ unload station. The SB8e/6e delivers superior post bond alignment accuracy resulting from precision mechanics, uniform force capability and leading temperature control. When matched with SUSS’ bond aligners, BA8/6, they offer enabling capability for MEMS, 3-D interconnects, and opto-electronics. This generation’s bond chamber and tooling supports all types of bond processes with optimization especially for thermocompression bonding and the flexibility to switch to anodic bond tooling. The flexibility of these bond systems make them ideal and economical for laboratories and small series production. Yet, combined with SUSS’ patent-pending low temperature plasma activation module these systems offer enabling technology for fusion bonding of SOI, III/V, and SiGe compounds at temperatures down to 200°C. Wafer Bonder문서
문서 없음
카테고리
Wafer Bonders
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
142239
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
SUSS MicroTec / KARL SUSS
SB6e
카테고리
Wafer Bonders
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
142239
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Features: Wafer and substrate sizes up to 6". Higher yield using the local clean room concept. Vacuum down to 5x10e-5 mbar. Overpressure up to 3 bar absolute. Bonding in controlled environment. Flexible process control using Windows NT with data recording and analysis. Optimized bonding routines can be replicated. Dimensions And Weights: L*W*H: 1200 mm×625 mm ×1399 mm(47.2in*24.6in*55.1in) Weight: 339 Kg (747.4Lb.)환경 설정
In the basic configuration, the SB6+ VAC substrate bonder includes the following components: Basic machine with pneumatic,machine control and PC. A loading slide to hold the substrate transport fixture for secured loading process.The loading gate lid is kept small,thus contamination in the chamber is reduced to a minimum. A process chamber with integrated handling system for shift-free transfer of the substrate stack. The motorized Z drive allows different bonding sequences. Facility connections: Depending on the configuration of the SB6+, the following facilities are or may be required: Power Supply: 208-230 VAC, 50/60Hz, 20A, P=4200 W Outlet location accessible and within 12 feet of machine Compressed Air: P=6-10 bar, oil-free, dry, dust-free: particles>40 um Consumption: 16.7 slpm(0.6 scfm) maximum Tube: outer diameter 8 mm (5/16") Vacuum: P=90-95mbar, optional for pressure bonding Consumption:16.7 slpm (0.6 scfm) maximum Tube: outer diameter 8 mm (5/16") Nitrogen: N2 Consumption: 8.4 slpm (0.3 scfm) maximum P=102.9-110.3 psig, Oil-free, dry, dust-free: particles >40 um Tube: outer diameter 8 mm (5/16") Exhaust: Tube: outer diameter 50.8 mm (2") heat resistant up to 350 ℃ Requirement: 10.6 cfm, 0.21 mBar Environmental Requirements: Vibration-free room Clean room better than class 100 Room temperature between 20 and 22℃ Humidity between 40 and 45% Distance to wall: 10 cm(3.9 in); To other machines: 30 cm(11.8 in)OEM 모델 설명
The SB8e and the SB6e (SB8e/6e) represent the latest generation technology in substrate bonders offering precision performance and flexibility in a user-friendly, high-quality package. The newly designed and enhanced SB8e/6e are semi-automatic, computer-controlled systems with both vacuum- and pressurecontrolled atmosphere capability featuring an ergonomic load/ unload station. The SB8e/6e delivers superior post bond alignment accuracy resulting from precision mechanics, uniform force capability and leading temperature control. When matched with SUSS’ bond aligners, BA8/6, they offer enabling capability for MEMS, 3-D interconnects, and opto-electronics. This generation’s bond chamber and tooling supports all types of bond processes with optimization especially for thermocompression bonding and the flexibility to switch to anodic bond tooling. The flexibility of these bond systems make them ideal and economical for laboratories and small series production. Yet, combined with SUSS’ patent-pending low temperature plasma activation module these systems offer enabling technology for fusion bonding of SOI, III/V, and SiGe compounds at temperatures down to 200°C. Wafer Bonder문서
문서 없음