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Process: SWC Tool config is based on original PO, please verify tool details at tool inspection Process module: HF; Poly (HF+HNO3)Transfer station: ASYST load port; Brooks robot(Dual arm robot)Sub-unit: CDS (Chemistry Dispense System) Transfer Configuration-Carrier transferCarier port*3, Tag reader *3Port door*3, motor*3Safty light curtain*2 Wafer transferBrooks robot:Dual arm robotRobot linear moduleFlip station*2: left & right Main bodyLeft ECO:motor*2Right ECO:motor*2ECO linear modulechuck: motor*1elevator: motor*1dispenser*4, motor*4 & cylinder*2 Tank: HFMixture 1: HFProcess tank material: PVDFBuffer tank material : PVDFProcess temp: 60℃Heating method: in-line heater (6KW)Exhaust method: Manual damperProcess Pump: rotary pump LEVITRONIX (48V -PFA-LV)Return Punmp: Diaphragm pump, model 110Tank level sensor: ifm electronic (KN5115)Drain method: pump drain (membrane pump A 10 TTZ )Drain line: 2 linesChemistry tube material: PFA Tank: PolyMixture 1:HF2: HNO3Mixing ratio: HF+HNO3Process tank material: PVDFBuffer tank material : PVDFProcess temp: 25℃Heating method: in-line heater (6KW)Exhaust method: Manual damperConcentration meter: HORIBA (CS-153)Process Pump: rotary pump LEVITRONIX (48V -PFA-LV)Return Punmp: Diaphragm pump, model 110dosing pump: METERING PUMP (PZ10)Paddle wheel: Flowmeter, paddle wheel Tank level sensor: ifm electronic (KN5115)Drain method: pump drain (membrane pump A 10 TTZ )Drain line: 2 linesChemistry tube material: PFA Damage/Missing parts list<span style="font-size: 14px;">Dry pumps are not included with sales</span>Please inspect tool to reconfirm

OEM 모델 설명

The DV-34BF is part of the Da Vinci Series, a single-wafer processing technology platform designed for high-volume manufacturing. It addresses new cleaning requirements for polymer removal and backside etch and clean, providing high-throughput and accurate wafer cleaning to maximize device yields. The four-chamber system performs a wide range of back-and frontside processes on 300 mm wafers and is optimized for emerging technologies such as high-k dielectrics, new metal gates, and non-volatile memory devices. It offers optimized process performance, high throughput, minimized footprint, advanced handling, reduced media consumption, flexible chemistry application, higher reliability, resulting in low CoO.