Lam Research is a leading supplier of plasma etch- and single-wafer clean equipment that plays a pivotal role in defining the features and capabilities of next-generation semiconductor devices. With the addition of Novellus' innovative thin-film deposition and surface preparation product lines, the new Lam Research is well-positioned within the industry to support critical technology transitions including 3D structures in advanced logic and NAND memory, as well as the scaling to 450 mm wafers.

VECTOR is a PECVD system for dielectric films that radically transforms the playing field in terms of capital productivity. A
200mm/300mm bridge tool, VECTOR is designed to deliver a fully integrated low-k dielectric structure at 0.10 micron and smaller design rules. VECTOR is designed for high reliability, with 40% fewer critical subassemblies than the nearest
competitor. With approximately 2/3rds the footprint of the nearest competitor, and a throughput of 120 wafers per hour. 

LAM RESEARCH / NOVELLUS

VECTOR

The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.

CONCEPT ONE "C1"

The INOVA system, which is in the final stages of its development, is an advanced PVD system that delivers Maxfill aluminum and superior Ti/Ti-nitride film quality with excellent particle performance. Maxfill is an innovative, low-pressure, low-k compatible process for aluminum via fill. The Ti/TiN process is in production with Controlled Divergence Technology (CDS). The INOVA is a multi-chamber single wafer processing system. INOVA(TM) Tantalum films are designed to enable barriers for copper metallization.

INOVA

The NOVELLUS CONCEPT TWO is a modular, integrated production system that is capable of depositing both dielectric and conductive metal layers by combining one or more processing chambers around a common, automated robotic wafer handler. It was introduced in November 1991.

CONCEPT TWO "C2"

Novellus VECTOR Express is an improvement to Novellus’ 300 mm VECTOR plasma-enhanced chemical vapor deposition (PECVD) platform that was introduced in 2007. It maintains industry-leading capital and footprint productivity by improving process throughput by up to 40%, while delivering benchmark thin film process performance that is critical to tool extendibility to 45 nm and beyond.

The SmartSoak processing feature is incorporated in VECTOR Express which utilizes the multi-station sequential processing (MSSP) architecture of VECTOR to control wafer heat-up independently from film deposition, improving film quality and reducing processing time .

VECTOR Express is also available in an ashable hard mask configuration (VECTOR Express AHM), designed to deposit films for the high aspect ratio patterning requirements required by 193 nm lithography.

VECTOR EXPRESS 

G19-10112-00

**PARTS**

VECTOR EXPRESS AHM

G19-10101-00

The INOVA xT is a 300mm version of INOVA with proven HCM extendability to the 0.10-micron technology node. It has an industry-leading throughput of 100 wafers per hour (wph).

INOVA xT

Novellus Systems introduced the Concept Two-ALTUS in 1993. It is a chemical vapor deposition reactor system that combines the modular architecture of the Concept Two system with an advanced tungsten CVD process chamber. The system features a new dual loadlock cassette module with full factory automation capability to meet the high throughput requirements of high volume automated eight inch wafer fabs. This dual loadlock cassette handler permits continuous operation of the process chamber with one loadlock, while a second loadlock is simultaneously being loaded or unloaded by the operator in the cleanroom.

CONCEPT TWO "C2" ALTUS

SPEED Max offers significant processing flexibility and productivity advantages over the SPEED NExT system, and extends the HDP CVD application to the 45 and 32 nm technology nodes.

CONCEPT THREE "C3" SPEED MAX

The Novellus Concept Three Speed is an advanced system designed for 300 mm wafers, boasting a proprietary hemispherical ion source and bi-polar electrostatic chuck. These innovative features ensure superior ion uniformity and precise temperature control. Even as the elements are scaled up for 300 mm wafers, the ion uniformity remains consistent due to the inherent design characteristics of the ion source. Additionally, an optimized gas delivery system enhances the overall within-wafer uniformity, further improving the system's performance.

CONCEPT THREE "C3" SPEED

CONCEPT THREE "C3"

The ALTUS Max is a tungsten deposition system that provides advanced contact and via fill technology. It is designed to deliver high productivity and is the first ALD tungsten system to achieve a throughput of over 120 wafers per hour. This sets a new benchmark in productivity while maintaining world-class reliability and single-digit 65 nm defect performance. The ALTUS Max is a powerful tool for semiconductor manufacturing.

CONCEPT THREE "C3" ALTUS MAX

SABRE has been proven to provide void-free copper fill of sub-0.15 micron trench features (at 9 or 10:1 aspect ratios) and 0.25 micron vias (at 5:1 aspect ratios). SABRE employs a proprietary electrofilling cell that eliminates the backside wafer contamination of copper, and features a unique plating cell design that ensures reproducibility of the copper fill, with a film uniformity of 3 sigma, [5% with a wafer. SABRE requires only two types of process modules to complete the electrofill process, for electrofilling (3 stations total) and the other for spin/rinse/dry (another 3 stations). The resulting simplicity of this design is
key to the system's high reliability and manufacturing availability.

SABRE

G19-10099-00

The NOVELLUS CONCEPT TWO SEQUEL is a Reactors / MOCVD system that can produce wafer size of 8 inches. It was initially shipped in a single chamber version targeted at thin dielectric films used in volume 200mm IMD production applications. 

CONCEPT TWO "C2" SEQUEL

The INOVA NExT, a 300mm metallization system designed to deposit highly conformal copper barrier-seed films at 45 nanometers and beyond. On the INOVA NExT, the single target HCM technology has been extended to the 45 nanometer node; the system also features an integrated ion-induced atomic layer deposition (iALD) module to deposit tantalum nitride (TaN) barrier films below 45 nanometers.

INOVA NExT

ALTUS DirectFill is a tungsten nitride/tungsten deposition system designed for advanced contact and via-fill applications at 65 nm and below. It simplifies the tungsten deposition process by replacing the standard multi-tool Ti/TiN/W approach with a single three-module system. The advanced plug-fill technology of ALTUS DirectFill can reduce contact resistance and lower the overall cost of ownership by 50% or more when compared to existing processes. This makes it a cost-effective and efficient solution for advanced contact and via-fill applications.

ALTUS DirectFill MAX

The NOVELLUS SABRE xT is a tool used for electrofilling that is part of the second generation of SABRE tools. It is designed to provide void-free fill in 0.13-micron geometries with aspect ratios up to 10:1. The SABRE xT is a “bridge tool” that can process either 200 or 300 mm wafers. It incorporates process enhancements in the areas of electrical waveforms, advanced bath chemistries, and automated chemical monitoring and control using Novellus’ proprietary SmartDose algorithm. The SABRE xT can process up to 75 wafers per hour and has achieved within-wafer uniformity performance of less than 2% 1 sigma and wafer-to-wafer uniformity of less than 1% 1 sigma in a production environment.

SABRE xT

The SABRE Extreme, an advanced Electrofill system that has been qualified at 45 nanometers and has demonstrated fill at 32 nanometers. The SABRE Extreme incorporates a number of technological innovations for advanced manufacturing applications, including advanced wafer entry control for thin seed layers (< 200A), tunable profile control for improved uniformities, and the capability to plate on non-copper seed materials.

SABRE EXTREME

The Concept Two SPEED is a Novellus product that is designed for 200 mm wafers. It features a hemispherical source that is patented and delivers high throughput and manufacturability. The hemispherical source has a single excitation frequency and coil, which makes it simpler and more elegant than other systems that require multiple coils to approach the ion uniformity level of SPEED. The Concept Two SPEED is an HDP CVD system with three chambers that can accommodate the high pumping speeds required to operate at the mTorr pressures necessary for these CVD processes .

CONCEPT TWO "C2" SPEED

The SABRE NExT (Nano Era xT) builds on the SABRE xT’s production track record, offering a proprietary, single step chemistry, a new anode cell design, and other hardware refinements to tackle the complex process requirements of 90 nanometer, 65 nanometer and 45 nanometer interconnect structures. In comparison to the SABRE xT, the SABRE NExT reduces chemical costs by over 30%, and when combined with improved throughput, cuts overall cost of ownership by over 10% on what is already a highly productive process.

SABRE NExT

The Novellus VECTOR Extreme is an advanced 300mm Plasma-Enhanced Chemical Vapor Deposition (PECVD) system designed for memory fabs requiring exceptional throughput. It processes up to 250 wafers-per-hour and features a central wafer process chamber with a dual handling robot, allowing integration of up to three PECVD process modules on a single system. Utilizing Novellus' multi-station sequential processing (MSSP) architecture, the VECTOR Extreme's process modules remain hardware-transparent with VECTOR Express, ensuring easy process integration across platforms. Additionally, the VECTOR Extreme offers an ashable hard mask configuration, known as VECTOR Extreme AHM, catering to specific processing needs.

VECTOR  EXTREME

SOLA xT	

SOLA EXCEL

02-319958-02 REV.1

The SABRE 3D electroplating system is a highly flexible and modular architecture that can perform a wide range of high-productivity wafer-level packaging (WLP) processes. These include copper through-silicon vias (TSV), copper redistribution layers (RDL), pillars, under-bump metallization, and lead-free micro-bumping. It is specifically designed for the advanced WLP market. The Sabre 3D can produce wafers up to 12 inches in size and has a TSV ECP of 12 inches . The system incorporates many of the technologies used in the SABRE platform, such as sealed dry contacts, innovative clamshell and cell design, SmartDose bath control, and precision wafer handling.


SABRE 3D

01-278432-00

G19-10100-00

ALTUS Max ExtremeFill, has been introduced for challenging conventional applications and 3D fill applications requiring greater than 100% step coverage, and can be upgraded onto existing ALTUS or ALTUS Max systems.

ALTUS MAX ExtremeFill

The Concept One-W deposits blanket tungsten metal films, which are increasingly used in advanced semiconductor devices to connect multiple metal layers in the integrated circuit.

CONCEPT ONE "C1" W

02-279466-01

VECTOR SOLA UV Cure

SABRE Excel, an electroplating system designed to provide industry-leading fill and defect density performance for the 22 nanometer technology node and beyond. The SABRE Excel platform features a new deposition module incorporating our patented IRISCell™ technology, as well as new hardware, software, and communications upgrades to the process tool’s mainframe required to address advanced fill applications.

SABRE EXCEL

VECTOR Q Strata is a product in the VECTOR family of Lam Research Corporation. It is designed to provide the performance and flexibility needed to create enabling structures and meet the demands of challenging applications in the semiconductor industry. The VECTOR family uses Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Plasma-Enhanced Atomic Layer Deposition (ALD) technologies to deposit high-quality dielectric films that meet exacting thickness, feature coverage, and stress, electrical, and mechanical requirements. The VECTOR Q Strata offers superior thin film quality, exceptional wafer-to-wafer uniformity, best-in-class productivity, low cost of ownership, and broad process flexibility enabled by Multi-Station Sequential Deposition (MSSD) architecture. It also features proprietary technology for controlling wafer heat-up independent of film deposition, improving film quality and reducing processing time.

VECTOR Q STRATA

The VECTOR Excel is a modular system designed to address the needs of advanced technology nodes that require pre- or post-deposition treatment of the dielectric film.

VECTOR EXCEL

CONCEPT ONE-DIELECTRIC
The Concept One-Dielectric is shipped in two versions, the Concept One-150, which processes 100, 125, and 150 mm (approximately 4, 5, and 6 inches) wafers and the Concept One-200, which processes 125, 150 and 200 mm (approximately 5, 6 and 8 inches) wafers and is designed for advanced eight inch fabrication lines.

CONCEPT ONE-200

 VECTOR Extreme can also be configured to deposit ashable hard mask (“AHM”) films.

VECTOR Extreme AHM

The Maxus is available on both the Concept One and Concept Two platform.
The Maxus enhanced the nitride deposition rate while retaining superior nitride film performance. It also enhances the gap fill capability ofTEOS films by enabling fluorinated-TEOS (F-TEOS) processing for .35 micron gap fill. F-TEOS enables the customer to lower the dielectric constant to 3.7, an important capability in enhancing device performance.

CONCEPT TWO "C2" MAXUS

This enhanced version of the SEQUEL system offers improved throughput performance for both thick and thin dielectric films, while occupying 40% less space than previous versions. It also provides a range of improved maintainability features and design enhancements that reduce customer facilities costs. It is available in both single and dual chamber versions.

CONCEPT TWO "C2" SEQUEL-S

SOLA is an innovative ultraviolet thermal processing (UVTP) system used for the low-temperature, post-deposition treatment of dielectric films. SOLA is designed for advanced materials such as high stress nitrides and porous low-k dielectrics that are used to deliver increased device speeds and lower power consumption in sub-90 nanometer chips. SOLA employs a high-productivity multi-station sequential treatment (MSST) architecture that achieves a treatment non-uniformity of less than 2%, thereby improving device yields.

SOLA

SEQUEL EXPRESS is an advanced version of the SEQUEL system designed to deposit Novellus’ CORAL family of low-k dielectric films, as well as all other advanced films required for 0.18-micron and smaller devices. With a throughput in excess of 110 wafers per hour, SEQUEL EXPRESS delivers up to 40 percent higher capital productivity.

CONCEPT TWO "C2" SEQUEL EXPRESS

SABRE Max is a product in Lam’s SABRE ECD product family, which offers the precision needed for copper damascene manufacturing on the industry’s productivity-leading platform. It is designed to meet the challenges of electrochemical deposition of copper, including providing void-free fill, low defects, low resistivity, and the ability to fill high aspect ratio structures while delivering high-productivity performance. SABRE Max offers high-throughput, void-free fill with superior defect density performance for advanced technology nodes and has the widest process window and highest rates of bottom-up growth to fill the most challenging HAR features. It is used for logic and memory interconnect applications.

SABRE MAX

Concept Two Titanium Nitride (TiN) system will be used to form a high quality, low cost barrier/adhesion layer prior to depositing tungsten (W).

CONCEPT TWO "C2" TiN

ALTUS Max ICEFill is a product from Lam’s ALTUS family of systems that combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. It addresses industry challenges such as minimizing contact resistance and enabling complete, defect-free tungsten fill for nanoscale structures. The product offers benefits such as lower overall resistivity of thin W films, low-fluorine and low-stress W fill for advanced 3D NAND and DRAM, and high step coverage with reduced thickness films by using ALD in the deposition of WN films. It is used for key applications such as tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.

ALTUS MAX ICEFill

The Prism MOCVD Ti-nitride system offers thin barrier solutions for high aspect ratio structures with superior barrier properties, conformality and film stability. This system is used to form a high quality, low cost barrier/adhesion layer prior to depositing tungsten.

CONCEPT TWO "C2" PRISM

Used to deposit high quality dielectric liners for TSV structures, as well as other low temperature films such as silicon nitride and silicon oxide that are compatible with bonded substrates. The system incorporates technology to tune the hermiticity and electrical performance of these low temperature films to match the film quality typically obtained with a higher temperature dielectric deposition. VECTOR 3D also uses the same patented MSSD technology that’s incorporated into the more than 1,000 VECTOR PECVD systems that have been shipped worldwide.

VECTOR 3D

VECTOR DT provides a single-step solution for wafer shape management by depositing a tunable counter-stress film on the back of the wafer without contacting the front side, thereby enabling improved lithography results, reduced bow-induced failures, and integration of high performance but highly stressed films. With strong customer adoption since its debut, the VECTOR DT installed base continues to grow as customers are transitioning to more than 96 layers.

VECTOR DT

In 2010, Novellus introduced a new version of the INOVA designed for copper barrier-seed applications in TSVs. The IONFLO copper seed in the INOVA 3D enables a four times reduction in the seed thickness required in a 6 micron by 60 micron TSV, significantly reducing the manufacturing cost.

INOVA 3D

Novellus introduced the Concept Two-Dual ALTUS tungsten deposition system in 1994. The Dual ALTUS is designed with a dual-chamber configuration that delivers the throughput power to dramatically lower the cost of tungsten deposition. It is considered the best solution in the industry for very high volume 200mm wafer fabs producing state-of-the-art 0.35um semiconductor devices.

CONCEPT TWO "C2" DUAL ALTUS

CONCEPT THREE "C3" SEQUEL

The NOVELLUS CONCEPT TWO DUAL SEQUEL is a system that uses reactive ion-beam deposition to deposit thick films onto wafers. It has two process chambers that can provide the throughput power of twelve stations, resulting in dramatic improvements in productivity for these types of films. It is designed for high throughput deposition of thick films, such as layers before CMP (chemical-mechanical planarization), and dual layer passivation films. It also offers dual-beam operation for increased wafer-to-wafer uniformity and higher deposition rates, as well as process control capabilities and versatile materials handling for a wide range of applications.

CONCEPT TWO "C2" DUAL SEQUEL

TOP MATCH	

Enhanced versions of ALTUS system offer improved throughput performance for both thick and thin dielectric films, while occupying 45% less space than previous versions. It also provide a range of improved maintainability features and design enhancements that reduce customer facilities costs. It is available in both single and dual chamber version.


CONCEPT TWO "C2" ALTUS-S

The ALTUS Max E is part of the ALTUS product family from Lam Research. It combines Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies to deposit highly conformal films for advanced tungsten metallization applications. This is important for semiconductor manufacturers as they move to smaller technology nodes and face significant scaling and integration challenges. The ALTUS Max E is designed to address these challenges by enabling complete, defect-free tungsten fill, while reducing resistivity of the bulk tungsten. It also offers high step coverage with reduced thickness films by using ALD in the deposition of WN films. Some key applications of the ALTUS Max E include tungsten plug and via fill, 3D NAND wordlines, low-stress composite interconnects, and WN barrier for via and contact metallization.

ALTUS MAX E

Concept Three ALTUS is a 300mm process module that delivers leading productivity and technology for contact and local interconnect applications. It uses Pulsed Nucleation Layer (PNL™) technology to integrate a high throughput nucleation layer with chemical vapor deposition (CVD bulk deposition). The Multi-Station Sequential Deposition (MSSD) architecture enables the nucleation layer and CVD fill to be performed within the same ALTUS chamber. This results in highly conformal tungsten films with improved film properties, benchmark productivity, and superior production availability. The integrated PNL and CVD approach produces the lowest Cost of Ownership tungsten deposition solution in the industry.

CONCEPT THREE "C3" ALTUS

The NOVELLUS CONCEPT TWO SPEED-S is a module used in the Novellus Concept Two Speed system. It consists of two flanges with an eight-inch diameter each, which are equipped with two larger turbomolecular pumps. This configuration allows for high pumping speeds that are necessary to operate at the mTorr pressures required for CVD processes. The SPEED-S is an improved version of SPEED that takes up 40% less space, leading to better throughput densities for customers.

CONCEPT TWO "C2" SPEED-S

The latest variant of the INOVA platform, introduced in 2007, incorporates a copper resputtering technology called HCM IONX to improve copper seed conformality, eliminate low-k dielectric damage, and extend PVD technology for seed deposition applications at 32 nm.

INOVA NExT HCM IONX

SABRE 3D xT

CONCEPT ONE-150

In 1995, the Company introduced  an extension to its Concept One-Dielectric system, the Concept One Maxus. The Maxus extends the Company's leadership in nitride passivation by enhancing the nitride deposition rate while retaining superior nitride film performance. It also enhances the gap fill capability of TEOS films by enabling fluorinated-TEOS (F-TEOS) processing for .35 micron gap fill. F-TEOS enables the customer to lower the dielectric constant to 3.7, an important capability in enhancing device performance. The Maxus is available on both the Concept One and Concept Two platform.

CONCEPT ONE "C1" MAXUS

The VECTOR Extreme TEOS xT version runs at industry leading throughputs.

VECTOR Extreme TEOS xT

 The SPEED NExT system for 300 mm wafers is designed specifically to address the challenges of dielectric gap fill at 65 nm and beyond. SPEED NExT builds upon the superior high conductance chamber design of the existing SPEED platform with an innovative source technology that enables repeatable gap fill across a 300-mm wafer. In addition, the ability to control the wafer position relative to the source allows SPEED NExT to have a wider gap fill process window.

LAM RESEARCH / NOVELLUS

개요

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상위 제품

VECTOR

CONCEPT ONE "C1"

INOVA

CONCEPT TWO "C2"

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