설명
설명 없음환경 설정
- Gases and maximum flows in positions 1 to 8 respectively are: CF4 (84 sccm) O2 (1000 sccm) He (50sccm) Ar (50 sccm) O2 (50 sccm) CHF3 (100 sccm) N2 (200 sccm) H2 (100 sccm) - Windows 7 Professional OS - Tool software: Plasma-Therm Cortex - OES Software: Plasma-Therm EndpointWorks - ICP source 2 MHz up to 2000 W with temperature control - Substrate temperature control via bipolar Johnsen-Rahbek electrostatic chuck - With backside Helium cooling CCP source 13.56 MHz up to 600 W thermally managed chamber liner and pump train - Optical emission spectroscopyOEM 모델 설명
VERSALINE system models are configured to perform an array of etch and deposition processes. Ion beam technology suits a range of applications, from low, controllable damage etching to high-rate, high-aspect-ratio, deep silicon etching to difficult materials. The systems support process control through EndpointWorks®. Enhancements include data logging, automated maintenance scheduler (AMS), and SECS/GEM. Our Cortex® control system provides a stable, user-friendly control interface designed for efficiency and productivity. The VERSALINE platform’s modular design allows for flexible configuration of substrate handling for a variety of handling options, from R&D single wafer or carrier loading with a loadlock to high-volume, multi-chamber production clusters. Clear upgrade paths that leverage costs and process development make future planning easy.문서
문서 없음
PLASMA-THERM
VERSALINE CVD
검증됨
카테고리
CVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
69834
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
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PLASMA-THERM
VERSALINE CVD
카테고리
CVD
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
69834
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
- Gases and maximum flows in positions 1 to 8 respectively are: CF4 (84 sccm) O2 (1000 sccm) He (50sccm) Ar (50 sccm) O2 (50 sccm) CHF3 (100 sccm) N2 (200 sccm) H2 (100 sccm) - Windows 7 Professional OS - Tool software: Plasma-Therm Cortex - OES Software: Plasma-Therm EndpointWorks - ICP source 2 MHz up to 2000 W with temperature control - Substrate temperature control via bipolar Johnsen-Rahbek electrostatic chuck - With backside Helium cooling CCP source 13.56 MHz up to 600 W thermally managed chamber liner and pump train - Optical emission spectroscopyOEM 모델 설명
VERSALINE system models are configured to perform an array of etch and deposition processes. Ion beam technology suits a range of applications, from low, controllable damage etching to high-rate, high-aspect-ratio, deep silicon etching to difficult materials. The systems support process control through EndpointWorks®. Enhancements include data logging, automated maintenance scheduler (AMS), and SECS/GEM. Our Cortex® control system provides a stable, user-friendly control interface designed for efficiency and productivity. The VERSALINE platform’s modular design allows for flexible configuration of substrate handling for a variety of handling options, from R&D single wafer or carrier loading with a loadlock to high-volume, multi-chamber production clusters. Clear upgrade paths that leverage costs and process development make future planning easy.문서
문서 없음