설명
Dry etching Including: EBARA GTE-0-2 dry scrubber, EBARA GTE-3-0 dry scrubber, Endpoint, Chiller (SCS 2WHA), Pump (A30W-N), Gas box. Missing parts: TC gauge circuit board, RF Generator* 1 piece.환경 설정
PolyOEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 어제
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
139260
웨이퍼 사이즈:
6"/150mm
빈티지:
1995
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
P5000 ETCH
카테고리
Dry / Plasma Etch
마지막 검증일: 어제
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
139260
웨이퍼 사이즈:
6"/150mm
빈티지:
1995
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Dry etching Including: EBARA GTE-0-2 dry scrubber, EBARA GTE-3-0 dry scrubber, Endpoint, Chiller (SCS 2WHA), Pump (A30W-N), Gas box. Missing parts: TC gauge circuit board, RF Generator* 1 piece.환경 설정
PolyOEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음