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APPLIED MATERIALS (AMAT) P5000 ETCH
    설명
    Dry etching
    환경 설정
    Poly
    OEM 모델 설명
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    문서

    문서 없음

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    검증됨

    카테고리
    Dry / Plasma Etch

    마지막 검증일: 오늘

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    139265


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    1992


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    APPLIED MATERIALS (AMAT) P5000 ETCH

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    Dry / Plasma Etch
    빈티지: 1995조건: 중고
    마지막 검증일어제

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    verified-listing-icon
    검증됨
    카테고리
    Dry / Plasma Etch
    마지막 검증일: 오늘
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    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    139265


    웨이퍼 사이즈:

    6"/150mm


    빈티지:

    1992


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    Dry etching
    환경 설정
    Poly
    OEM 모델 설명
    The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.
    문서

    문서 없음

    유사 등재물
    모두 보기
    APPLIED MATERIALS (AMAT) P5000 ETCH

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    Dry / Plasma Etch빈티지: 1995조건: 중고마지막 검증일:어제
    APPLIED MATERIALS (AMAT) P5000 ETCH

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    Dry / Plasma Etch빈티지: 1992조건: 중고마지막 검증일:오늘
    APPLIED MATERIALS (AMAT) P5000 ETCH

    APPLIED MATERIALS (AMAT)

    P5000 ETCH

    Dry / Plasma Etch빈티지: 1996조건: 중고마지막 검증일:오늘