설명
설명 없음환경 설정
This highly capable semiconductor etch tool was sparingly used (only a few hours per week) and meticulously maintained under service agreements throughout its operational life. Before decommissioning, it was in excellent working condition and has since been stored carefully. Key Features: Cassette to Cassette Handling Designed for silicon etching with gases plumbed for SF6, C4F8, N2, O2, and Ar Includes an add-on module for XeF2 isotropic silicon etching Tooling compatible with both 100 mm and 150 mm wafers Unique cyclical etching capability: alternating phases of etch and passivation enable deep, highly anisotropic etching results Capable of etching depths exceeding 500 microns and aspect ratios up to 20:1 with exceptional precision This STS ASE system remains a top choice for deep reactive-ion etching applications requiring fine control and high aspect ratio trenches, widely used in MEMS and microfabrication research. Contact for further details and pricing.OEM 모델 설명
미제공문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 28일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
136806
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
ASE ICP DRIE
카테고리
Dry / Plasma Etch
마지막 검증일: 28일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
136806
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
This highly capable semiconductor etch tool was sparingly used (only a few hours per week) and meticulously maintained under service agreements throughout its operational life. Before decommissioning, it was in excellent working condition and has since been stored carefully. Key Features: Cassette to Cassette Handling Designed for silicon etching with gases plumbed for SF6, C4F8, N2, O2, and Ar Includes an add-on module for XeF2 isotropic silicon etching Tooling compatible with both 100 mm and 150 mm wafers Unique cyclical etching capability: alternating phases of etch and passivation enable deep, highly anisotropic etching results Capable of etching depths exceeding 500 microns and aspect ratios up to 20:1 with exceptional precision This STS ASE system remains a top choice for deep reactive-ion etching applications requiring fine control and high aspect ratio trenches, widely used in MEMS and microfabrication research. Contact for further details and pricing.OEM 모델 설명
미제공문서
문서 없음