설명
설명 없음환경 설정
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM 모델 설명
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.문서
문서 없음
STS
HRM
검증됨
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
110058
웨이퍼 사이즈:
6"/150mm
빈티지:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
STS
HRM
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
110058
웨이퍼 사이즈:
6"/150mm
빈티지:
2003
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
-Materials Etched: Si, SOI wafers -Masks: SiO2, SiN -Gases: SF6, C4F8, Ar, O2, Co2 -Photoresists: SC1800 series& SPR220 (Shipley), AZ4000 series (Clariant), NPR (Futurex) -Temp range: -20C to 100C Windows 2000 PC Note: pumps not includedOEM 모델 설명
With market leading etch rates using a conventional de-coupled plasma source, the HRM provides a cost effective Deep Reactive lon Etch (DRIE) processing chamber. Designed to offer high etch rates while controlling ion damage, the HRM is ideal for deep anisotropic silicon etching using STS' ASE® process technology.문서
문서 없음