설명
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.환경 설정
환경 설정 없음OEM 모델 설명
미제공문서
문서 없음
ULVAC
NE-950
카테고리
Dry / Plasma Etch
마지막 검증일: 30일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
135818
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
• With Process gases BCb. Clz. SiCl4. CF4, SFo, C4Fs. 02. & Ar. this versatile ICP etcher is designed to etch GaN. Sapphire. metals. ITO, SiC . AlN. ZnO and others • Patented ICP with magnetic confinement (called ISM) provides higher plasma density at lower pressure improves etch rate. uniformity and anisotropy. • The patented star cathode distributes power evenly enhancing uniformity. • System automatically loads (3) 6 inch wafers from the cassette to the carrier. • The carrier is clamped to the cathode which is temperature controlled via a heat exchange. The individual wafers are cooled with backside Helium. • UL and transfer chamber share an Ebara roughing pump. The process chamber uses an Ebara roughing pump and a 1000 Vs turbo.환경 설정
환경 설정 없음OEM 모델 설명
미제공문서
문서 없음