설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.문서
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ASM
EPSILON E2000
검증됨
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 17일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
117607
웨이퍼 사이즈:
알 수 없음
빈티지:
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기ASM
EPSILON E2000
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 17일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
117607
웨이퍼 사이즈:
알 수 없음
빈티지:
2001
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
환경 설정 없음OEM 모델 설명
The ASM Epsilon E2000 is a single-wafer epitaxy tool designed to accommodate various epitaxy applications. It covers a wide range of processes, including high-temperature silicon for wafer preparation and low-temperature selective or non-selective Silicon Germanium (SiGe) for creating transistor strain layers. The system is optimized for processing 150mm and 200mm wafers, offering flexibility and precision in epitaxial growth processes.문서
문서 없음