설명
Horizontal furnaces, GIGA TECH cleaning machines, and BAKE are excluded.환경 설정
환경 설정 없음OEM 모델 설명
The SEN CORPORATION / SUMITOMO NV-GSD III-180 is a high-current ion implanter that supports 5, 6, and 8-inch wafers. It has a wide range of implantation energy, from 2 to 180 keV, and is equipped with a post-deflection acceleration mechanism. It has a reliable batch transfer system, high throughput, and accurate high-dose control. The beam quality is high with low metal contamination and cross-contamination. It is also highly reliable and maintainable.- High-Current Ion Implanter - Supports for 5, 6, and 8-inch wafers - Supports for a wide range of implantation energy, from 2 to 180 keV (equipped with a post-deflection acceleration mechanism) - Reliable batch transfer system - Highly effective throughput - Reliable high-dose control accuracy - High beam quality with low metal contamination and low cross-contamination - High reliability, high maintainability문서
문서 없음
카테고리
High Current
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
124715
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
SEN CORPORATION / SUMITOMO
NV GSD III 180
카테고리
High Current
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
124715
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Horizontal furnaces, GIGA TECH cleaning machines, and BAKE are excluded.환경 설정
환경 설정 없음OEM 모델 설명
The SEN CORPORATION / SUMITOMO NV-GSD III-180 is a high-current ion implanter that supports 5, 6, and 8-inch wafers. It has a wide range of implantation energy, from 2 to 180 keV, and is equipped with a post-deflection acceleration mechanism. It has a reliable batch transfer system, high throughput, and accurate high-dose control. The beam quality is high with low metal contamination and cross-contamination. It is also highly reliable and maintainable.- High-Current Ion Implanter - Supports for 5, 6, and 8-inch wafers - Supports for a wide range of implantation energy, from 2 to 180 keV (equipped with a post-deflection acceleration mechanism) - Reliable batch transfer system - Highly effective throughput - Reliable high-dose control accuracy - High beam quality with low metal contamination and low cross-contamination - High reliability, high maintainability문서
문서 없음