설명
High Current Ion Implanter환경 설정
- 3 Phase - 200 Volt - 50 Hz - 50 kVAOEM 모델 설명
The SEN CORPORATION / SUMITOMO NV-GSD III-180 is a high-current ion implanter that supports 5, 6, and 8-inch wafers. It has a wide range of implantation energy, from 2 to 180 keV, and is equipped with a post-deflection acceleration mechanism. It has a reliable batch transfer system, high throughput, and accurate high-dose control. The beam quality is high with low metal contamination and cross-contamination. It is also highly reliable and maintainable.- High-Current Ion Implanter - Supports for 5, 6, and 8-inch wafers - Supports for a wide range of implantation energy, from 2 to 180 keV (equipped with a post-deflection acceleration mechanism) - Reliable batch transfer system - Highly effective throughput - Reliable high-dose control accuracy - High beam quality with low metal contamination and low cross-contamination - High reliability, high maintainability문서
문서 없음
카테고리
High Current
마지막 검증일: 2일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
137729
웨이퍼 사이즈:
6"/150mm
빈티지:
2003
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
SEN CORPORATION / SUMITOMO
NV GSD III 180
카테고리
High Current
마지막 검증일: 2일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
137729
웨이퍼 사이즈:
6"/150mm
빈티지:
2003
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
High Current Ion Implanter환경 설정
- 3 Phase - 200 Volt - 50 Hz - 50 kVAOEM 모델 설명
The SEN CORPORATION / SUMITOMO NV-GSD III-180 is a high-current ion implanter that supports 5, 6, and 8-inch wafers. It has a wide range of implantation energy, from 2 to 180 keV, and is equipped with a post-deflection acceleration mechanism. It has a reliable batch transfer system, high throughput, and accurate high-dose control. The beam quality is high with low metal contamination and cross-contamination. It is also highly reliable and maintainable.- High-Current Ion Implanter - Supports for 5, 6, and 8-inch wafers - Supports for a wide range of implantation energy, from 2 to 180 keV (equipped with a post-deflection acceleration mechanism) - Reliable batch transfer system - Highly effective throughput - Reliable high-dose control accuracy - High beam quality with low metal contamination and low cross-contamination - High reliability, high maintainability문서
문서 없음