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Process Chamber W65 × D129 × H234 cm 1300kg Liquid Source/ Gas Cabinet W231 × D90 × H79 cm 150kg Heat Exchanger W102 × D77 × H107 cm 150kgOEM 모델 설명
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.문서
문서 없음
카테고리
PECVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
95589
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
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LAM RESEARCH / NOVELLUS
CONCEPT ONE "C1"
카테고리
PECVD
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
95589
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
Process Chamber W65 × D129 × H234 cm 1300kg Liquid Source/ Gas Cabinet W231 × D90 × H79 cm 150kg Heat Exchanger W102 × D77 × H107 cm 150kgOEM 모델 설명
The Novellus Concept-One is a PECVD tool that uses plasma-enhanced chemical vapor deposition to deposit various dielectric films on silicon wafers. It can deposit oxide, nitride, oxynitride, PSG and TEOS oxide films. The Concept1 is also a PECVD tool that deposits dielectric films on 6" wafers. It is capable of depositing thick films in excess of 1 um and allows CMOS compatible metals, making it suitable for backend processes. The system deposits on multiple wafers in parallel in a batch-type reactor.문서
문서 없음