설명
설명 없음환경 설정
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEM 모델 설명
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.문서
문서 없음
PLASMA-THERM
790
검증됨
카테고리
Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
19003
웨이퍼 사이즈:
8"/200mm
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
PLASMA-THERM
790
카테고리
Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
19003
웨이퍼 사이즈:
8"/200mm
빈티지:
알 수 없음
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
790 RIE System - Max wafer size capable: 8"/200mm - RFPP RF5S 500W RF Generator - Leybold 361C Turbo Pump (Qty 1) - Leybold NT 150/360 Controller - MKS 1160B MFCs (gas configuration listed below) - Chiller - Edwards QDP40 Dry Pump (or equivalent) - Operator Manual and Documentation Gas Configuration consists of: - O2 200sccm - H2 100sccm - CH4 20sccm - CHF3 200sccm Single RIE Chamber Ideal for R&DOEM 모델 설명
The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.문서
문서 없음