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PLASMA-THERM 790
    설명
    설명 없음
    환경 설정
    Dual Chamber 790 PECVD RIE
    OEM 모델 설명
    The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.
    문서

    문서 없음

    PLASMA-THERM

    790

    verified-listing-icon

    검증됨

    카테고리
    Plasma Etch

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    54578


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    1998

    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    PLASMA-THERM 790

    PLASMA-THERM

    790

    Plasma Etch
    빈티지: 0조건: 중고
    마지막 검증일어제

    PLASMA-THERM

    790

    verified-listing-icon
    검증됨
    카테고리
    Plasma Etch
    마지막 검증일: 60일 이상 전
    listing-photo-868a683548fc463286dca3d98ba78084-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    54578


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    1998


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    설명 없음
    환경 설정
    Dual Chamber 790 PECVD RIE
    OEM 모델 설명
    The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.
    문서

    문서 없음

    유사 등재물
    모두 보기
    PLASMA-THERM 790

    PLASMA-THERM

    790

    Plasma Etch빈티지: 0조건: 중고마지막 검증일: 어제
    PLASMA-THERM 790

    PLASMA-THERM

    790

    Plasma Etch빈티지: 0조건: 개조됨마지막 검증일: 60일 이상 전
    PLASMA-THERM 790

    PLASMA-THERM

    790

    Plasma Etch빈티지: 0조건: 개조됨마지막 검증일: 60일 이상 전