설명
Included Components: -EFEM with Three Load Ports -Main Body Part No: TRT-TMZZ -Chamber Part No: TEX-061 (Qty. 4) -Transformer Box: 3M80-001940-13 (Qty. 2) -Power Distribution Part No: MB-G2AAAA환경 설정
TEL Tokyo Electron Triase+ 300mm CVD ASFD TiN Process System Load Ports: 3 Process: ASFD TiN Software: V5.650R1OEM 모델 설명
The Triase+™ EX-II™ TiN (Titanium Nitride) is an advanced 300mm single wafer deposition system for high speed ASFD which enables high-quality thin film formation with excellent within-wafer uniformity and high step coverage characteristics. Featuring an optimized reactor design with new gas injection module, the system achieves high productivity even in the leading-edge semiconductor device manufacturing, and is used for various applications including formation of contact barriers, capacitor electrodes, word line barriers and metal gates.문서
문서 없음
TEL / TOKYO ELECTRON
TRIASe+ EX-II TiN
검증됨
카테고리
Deposition
마지막 검증일: 8일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
114272
웨이퍼 사이즈:
12"/300mm
빈티지:
2017
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
TEL / TOKYO ELECTRON
TRIASe+ EX-II TiN
카테고리
Deposition
마지막 검증일: 8일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
114272
웨이퍼 사이즈:
12"/300mm
빈티지:
2017
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Included Components: -EFEM with Three Load Ports -Main Body Part No: TRT-TMZZ -Chamber Part No: TEX-061 (Qty. 4) -Transformer Box: 3M80-001940-13 (Qty. 2) -Power Distribution Part No: MB-G2AAAA환경 설정
TEL Tokyo Electron Triase+ 300mm CVD ASFD TiN Process System Load Ports: 3 Process: ASFD TiN Software: V5.650R1OEM 모델 설명
The Triase+™ EX-II™ TiN (Titanium Nitride) is an advanced 300mm single wafer deposition system for high speed ASFD which enables high-quality thin film formation with excellent within-wafer uniformity and high step coverage characteristics. Featuring an optimized reactor design with new gas injection module, the system achieves high productivity even in the leading-edge semiconductor device manufacturing, and is used for various applications including formation of contact barriers, capacitor electrodes, word line barriers and metal gates.문서
문서 없음