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설명
e-Max 3Ch�환경 설정
환경 설정 없음OEM 모델 설명
"This single-wafer, multi-chamber machine processes 5”, 6”, or 8” wafers for ≤200mm fabrication. Applications include: epitaxy, etch, CVD, plasma nitridation, and RTP. AMAT’s CENTURA II can accommodate up to 4 process chambers and 2 auxiliary chambers. Configuration includes load lock chambers, wafer handler robot, transfer wafer, process chambers, pneumatic panel, orientation chambergas panel, and cool down chamber. Centura II is compatible with numerous auxiliary chamber types including: Lamp Heated CVD, PE TEOS DxZ, PE Silane DxZ, Gigafill SACVD, Ultima HDP-CVD, Ultima+ HDP-CVD, Ultima tE HDP-CVD, Tungsten WxZ, ALD Tungsten, WxP Tungsten Etch (HeWeb), Tectra Titanium, Tectra Tinitride, ALD Tinitride, Reactive Preclean+, Metal Etch DPS/(+), Poly Etch DPS/(+), Poly Etch Deep Trench (DT), ASP/(+), Oxide Super-E , Oxide eMxP+, Oxide MxP+, Oxide eMax, IPS Dielectric Etch, Poly Etch MxP, Poly Etch MxP+, R2 Metal Etch, Metal Etch MxP, Mark II Etch, Orienter, and various cool down chamber mechanisms."문서
문서 없음
PREFERRED
SELLER
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
Buyer pays 12% premium of final sale price
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
97853
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
PREFERRED
SELLER
APPLIED MATERIALS (AMAT)
CENTURA II
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
Buyer pays 12% premium of final sale price
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
97853
웨이퍼 사이즈:
알 수 없음
빈티지:
알 수 없음
Have Additional Questions?
Logistics Support
Available
Money Back Guarantee
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
e-Max 3Ch�환경 설정
환경 설정 없음OEM 모델 설명
"This single-wafer, multi-chamber machine processes 5”, 6”, or 8” wafers for ≤200mm fabrication. Applications include: epitaxy, etch, CVD, plasma nitridation, and RTP. AMAT’s CENTURA II can accommodate up to 4 process chambers and 2 auxiliary chambers. Configuration includes load lock chambers, wafer handler robot, transfer wafer, process chambers, pneumatic panel, orientation chambergas panel, and cool down chamber. Centura II is compatible with numerous auxiliary chamber types including: Lamp Heated CVD, PE TEOS DxZ, PE Silane DxZ, Gigafill SACVD, Ultima HDP-CVD, Ultima+ HDP-CVD, Ultima tE HDP-CVD, Tungsten WxZ, ALD Tungsten, WxP Tungsten Etch (HeWeb), Tectra Titanium, Tectra Tinitride, ALD Tinitride, Reactive Preclean+, Metal Etch DPS/(+), Poly Etch DPS/(+), Poly Etch Deep Trench (DT), ASP/(+), Oxide Super-E , Oxide eMxP+, Oxide MxP+, Oxide eMax, IPS Dielectric Etch, Poly Etch MxP, Poly Etch MxP+, R2 Metal Etch, Metal Etch MxP, Mark II Etch, Orienter, and various cool down chamber mechanisms."문서
문서 없음