설명
Oxide EMXP plus chamber환경 설정
환경 설정 없음OEM 모델 설명
"This single-wafer, multi-chamber machine processes 5”, 6”, or 8” wafers for ≤200mm fabrication. Applications include: epitaxy, etch, CVD, plasma nitridation, and RTP. AMAT’s CENTURA II can accommodate up to 4 process chambers and 2 auxiliary chambers. Configuration includes load lock chambers, wafer handler robot, transfer wafer, process chambers, pneumatic panel, orientation chambergas panel, and cool down chamber. Centura II is compatible with numerous auxiliary chamber types including: Lamp Heated CVD, PE TEOS DxZ, PE Silane DxZ, Gigafill SACVD, Ultima HDP-CVD, Ultima+ HDP-CVD, Ultima tE HDP-CVD, Tungsten WxZ, ALD Tungsten, WxP Tungsten Etch (HeWeb), Tectra Titanium, Tectra Tinitride, ALD Tinitride, Reactive Preclean+, Metal Etch DPS/(+), Poly Etch DPS/(+), Poly Etch Deep Trench (DT), ASP/(+), Oxide Super-E , Oxide eMxP+, Oxide MxP+, Oxide eMax, IPS Dielectric Etch, Poly Etch MxP, Poly Etch MxP+, R2 Metal Etch, Metal Etch MxP, Mark II Etch, Orienter, and various cool down chamber mechanisms."문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
132002
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
CENTURA II
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
132002
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Oxide EMXP plus chamber환경 설정
환경 설정 없음OEM 모델 설명
"This single-wafer, multi-chamber machine processes 5”, 6”, or 8” wafers for ≤200mm fabrication. Applications include: epitaxy, etch, CVD, plasma nitridation, and RTP. AMAT’s CENTURA II can accommodate up to 4 process chambers and 2 auxiliary chambers. Configuration includes load lock chambers, wafer handler robot, transfer wafer, process chambers, pneumatic panel, orientation chambergas panel, and cool down chamber. Centura II is compatible with numerous auxiliary chamber types including: Lamp Heated CVD, PE TEOS DxZ, PE Silane DxZ, Gigafill SACVD, Ultima HDP-CVD, Ultima+ HDP-CVD, Ultima tE HDP-CVD, Tungsten WxZ, ALD Tungsten, WxP Tungsten Etch (HeWeb), Tectra Titanium, Tectra Tinitride, ALD Tinitride, Reactive Preclean+, Metal Etch DPS/(+), Poly Etch DPS/(+), Poly Etch Deep Trench (DT), ASP/(+), Oxide Super-E , Oxide eMxP+, Oxide MxP+, Oxide eMax, IPS Dielectric Etch, Poly Etch MxP, Poly Etch MxP+, R2 Metal Etch, Metal Etch MxP, Mark II Etch, Orienter, and various cool down chamber mechanisms."문서
문서 없음