설명
Equipment description: SiO2, SiN, POLY etching환경 설정
환경 설정 없음OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 오늘
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
139508
웨이퍼 사이즈:
6"/150mm, 8"/200mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
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APPLIED MATERIALS (AMAT)
P5000 ETCH
카테고리
Dry / Plasma Etch
마지막 검증일: 오늘
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
139508
웨이퍼 사이즈:
6"/150mm, 8"/200mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Equipment description: SiO2, SiN, POLY etching환경 설정
환경 설정 없음OEM 모델 설명
The AMAT P5000 Etch is a magnetically enhanced reactive ion etching system (MERIE) with two functional process chambers (Chambers B & C). P5000 Chamber B is primarily used for etching silicon based dielectrics (silicon dioxide, silcon nitride, etc.) and some carbon based compounds (resist, poly imide, etc) while chamber C is mainly used for silicon etching with high selectivity to underlying dielectric such as silicon dioxide. The system can process only 4" wafers. Pieces have to be attached to a 4" wafer. Though the process chamber processes one wafer at a time, up to 25 wafers can be loaded per batch.문서
문서 없음