설명
설명 없음환경 설정
-Robot type: Shuttle film collection Shuttle film collection -Software: Classic -Materials etched: Metal metal -List of process gases：CL2/BCL3/O2/HE/SF6/N2/CF4 -Etch process: Metal etching metal etching -Contains two chambers: One for etching; A glue remover. Containing molecular sieve contains two chambers: one for etching; one for glue remover. Contains molecular sieves.OEM 모델 설명
The TCP 9600SE is a high density, low pressure etch system from Lam’s TCP product line. It incorporates the Company’s patented Transformer Coupled Plasma source technology for etching 0.35 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution to their advanced needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer tool, or on the Alliance multichamber cluster platform.문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
119511
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
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LAM RESEARCH CORPORATION
TCP 9600SE
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
119511
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음환경 설정
-Robot type: Shuttle film collection Shuttle film collection -Software: Classic -Materials etched: Metal metal -List of process gases：CL2/BCL3/O2/HE/SF6/N2/CF4 -Etch process: Metal etching metal etching -Contains two chambers: One for etching; A glue remover. Containing molecular sieve contains two chambers: one for etching; one for glue remover. Contains molecular sieves.OEM 모델 설명
The TCP 9600SE is a high density, low pressure etch system from Lam’s TCP product line. It incorporates the Company’s patented Transformer Coupled Plasma source technology for etching 0.35 micron and smaller geometries. It is used for metal etch applications and is designed to offer customers a reliable, lower cost of ownership solution to their advanced needs. The system operates at lower pressures for improved pattern transfer control and higher plasma density for higher etch rates. It is available as a stand-alone, single wafer tool, or on the Alliance multichamber cluster platform.문서
문서 없음