설명
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformity환경 설정
환경 설정 없음OEM 모델 설명
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ULVAC
NE-950EX
카테고리
Dry / Plasma Etch
마지막 검증일: 60일 이상 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
128838
웨이퍼 사이즈:
6"/150mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
high density, high anisotropy, ICP batch etch for GaN; could be used forSiC or metal etch; could also add a PECVD or ICP chamber to avoid cross contaminationchamber as well; fully automated. Wafers are automatically transfered to a wafer carrier which is mechanically clamped to the capacitively coupled cathode which provides biasing for good anisotropy and backside He cooling. Magnets are used to help focus the plasma for uniformity환경 설정
환경 설정 없음OEM 모델 설명
미제공문서
문서 없음