ULVAC CTS-1500, which is specially matched with ULVAC NE950 etching machine. It meets the cooling requirements of RF power supply, process chamber and vacuum pump set, with temperature control accuracy of ±0.5℃, ensuring stable operation of the equipment during mass production.

Main pump (high vacuum pump): ULVAC CRYO-U20 Cryopump, with pumping speed of 2000L/s (N₂) and ultimate vacuum ≤5×10⁻⁸ Pa, suitable for high-vacuum process requirements of 4-6 inch wafer etching. It is matched with ULVAC original dry scroll pump as the backing pump to form a complete vacuum system.

Yes

The equipment is equipped with specialty gas lines (semiconductor standard) made of 316L BA/EP stainless steel (caliber: 1/4", 3/8", 1/2") with VCR face seal joints (high cleanliness and zero leakage). The gas lines are compatible with etchable materials including Metal, GaN, InP, SiO₂, Si, Polyimide, Sapphire, ITO, SiC, AlN, ZnO, quaternary compound semiconductors. The system is equipped with precision pressure regulating valves, mass flow controllers (MFC), particle filters and leak detection devices to ensure safe and stable gas supply.

It adopts inductively coupled plasma dry etching process (ICP-RIE). Under high vacuum conditions, RF high-frequency discharge generates high-density plasma, which realizes high-precision material removal through the combined action of physical sputtering and chemical reaction. It supports Bosch process, low-temperature etching and other process modes, and is specially optimized for LED mass production and compound semiconductor processing.