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SSM 5200
  • SSM 5200
  • SSM 5200
  • SSM 5200
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환경 설정
Resistivity
OEM 모델 설명
The SSM 5200 is an off-line metrology system that measures a variety of electrical oxide and dielectric characteristics on monitor wafers. It can measure capacitive effective thickness and equivalent oxide thickness of advanced gate dielectrics less than 1 nanometer thick with high precision. It also includes a wide range of current voltage (IV) measurements such as leakage current, TDDB, and SILC. The SSM 5200 uses a small elastic probe to form a temporary gate on the dielectric surface and an integrated pattern recognition system to locate scribe line test areas. The elastic probe has a diameter of less than 30 µm and does not damage the dielectric surface.
문서

문서 없음

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검증됨

카테고리
Metrology

마지막 검증일: 60일 이상 전

주요 품목 세부 정보

조건:

Used


작동 상태:

알 수 없음


제품 ID:

116759


웨이퍼 사이즈:

8"/200mm


빈티지:

2008


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available

SSM

5200

verified-listing-icon
검증됨
카테고리
Metrology
마지막 검증일: 60일 이상 전
listing-photo-d0a7c94ac1624ae08d993a2279b15e2f-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
주요 품목 세부 정보

조건:

Used


작동 상태:

알 수 없음


제품 ID:

116759


웨이퍼 사이즈:

8"/200mm


빈티지:

2008


Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
설명 없음
환경 설정
Resistivity
OEM 모델 설명
The SSM 5200 is an off-line metrology system that measures a variety of electrical oxide and dielectric characteristics on monitor wafers. It can measure capacitive effective thickness and equivalent oxide thickness of advanced gate dielectrics less than 1 nanometer thick with high precision. It also includes a wide range of current voltage (IV) measurements such as leakage current, TDDB, and SILC. The SSM 5200 uses a small elastic probe to form a temporary gate on the dielectric surface and an integrated pattern recognition system to locate scribe line test areas. The elastic probe has a diameter of less than 30 µm and does not damage the dielectric surface.
문서

문서 없음