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PLASMATHERM 790
    설명
    설명 없음
    환경 설정
    Dual Chamber 790 PECVD RIE
    OEM 모델 설명
    The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.
    문서

    문서 없음

    PLASMATHERM

    790

    verified-listing-icon

    검증됨

    카테고리
    Dry / Plasma Etch

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    54578


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    1998


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    PLASMATHERM 790

    PLASMATHERM

    790

    Dry / Plasma Etch
    빈티지: 0조건: 중고
    마지막 검증일16일 전

    PLASMATHERM

    790

    verified-listing-icon
    검증됨
    카테고리
    Dry / Plasma Etch
    마지막 검증일: 60일 이상 전
    listing-photo-868a683548fc463286dca3d98ba78084-https://d2pkkbyngq3xpw.cloudfront.net/moov_media/3.0-assets/photo-coming-soon-small.png
    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    54578


    웨이퍼 사이즈:

    8"/200mm


    빈티지:

    1998


    Have Additional Questions?
    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    설명 없음
    환경 설정
    Dual Chamber 790 PECVD RIE
    OEM 모델 설명
    The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.
    문서

    문서 없음

    유사 등재물
    모두 보기
    PLASMATHERM 790

    PLASMATHERM

    790

    Dry / Plasma Etch빈티지: 0조건: 중고마지막 검증일:16일 전
    PLASMATHERM 790

    PLASMATHERM

    790

    Dry / Plasma Etch빈티지: 1993조건: 중고마지막 검증일:30일 이상 전
    PLASMATHERM 790

    PLASMATHERM

    790

    Dry / Plasma Etch빈티지: 0조건: 개조됨마지막 검증일:60일 이상 전