설명
STS Deep Reactive Ion Si Etcher (Bosch Process) The STS Multiplex DRIE system uses the Bosch process to etch silicon deeply and anisotropic. In addition to the platen RF power supply used for reactive ion etching (RIE), the system is equipped with an inductively coupled plasma (ICP) RF source, which allows independent control of plasma density and DC bias. The system features a water-cooled electrode and helium backside cooling to maintain the sample at a low temperature during processing. It is designed to accommodate and etch 200 mm wafers.환경 설정
환경 설정 없음OEM 모델 설명
The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.문서
문서 없음
카테고리
Dry / Plasma Etch
마지막 검증일: 3일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Deinstalled
제품 ID:
64816
웨이퍼 사이즈:
8"/200mm
빈티지:
1997
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
STS
MULTIPLEX ICP
카테고리
Dry / Plasma Etch
마지막 검증일: 3일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
Deinstalled
제품 ID:
64816
웨이퍼 사이즈:
8"/200mm
빈티지:
1997
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
STS Deep Reactive Ion Si Etcher (Bosch Process) The STS Multiplex DRIE system uses the Bosch process to etch silicon deeply and anisotropic. In addition to the platen RF power supply used for reactive ion etching (RIE), the system is equipped with an inductively coupled plasma (ICP) RF source, which allows independent control of plasma density and DC bias. The system features a water-cooled electrode and helium backside cooling to maintain the sample at a low temperature during processing. It is designed to accommodate and etch 200 mm wafers.환경 설정
환경 설정 없음OEM 모델 설명
The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.문서
문서 없음