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STS MULTIPLEX ICP
    설명
    설명 없음
    환경 설정
    STS Multiplex ICP Deep Reactive Ion Etcher (DRIE), 6"-8" Semi auto mode Frequency: 600 Hz Mode: Bosch Generator rack Chiller Pump Chamber: Deep silicon etch process SOI Trench etch Gas line: (4) Valves - MFC Filters (VCR) ICP 240BF Source (ASE-exc PSU / Matching unit) Temperature: 5°C - 40°C ICP SC160M Process chamber (MESC) RF Supply / Matching unit: 300/30 W (13.56 MHz) RF Supply / Matching unit: 1 kW (13.56 MHz) Chamber parts: Substrate, 6" (Mechanical clamping) Chamber externals: ICP V2 Mechanical wafer clamp electrode (Tripod) With he backside cooling Process chamber: ICP V2 Unified ISO250 (Inc insulation spacers) SR With 160 adapter LEYBOLD MAG900CT Turbo pump EDWARDS iQDP80 (M) Dry pump Includes: EDWARDS D146 Penning gauge MKS 51A and SMC ZSE6B Pressure switches EDWARDS 655 100 mT Cap man gauge EDWARDS E2M40 PFPE vacuum pump NW16 Bypass pump line Gas box Affinity chiller Electric cluster cabinet Lower electrode: ICP WTC Tripod lift Substrate clamping / Platen: ICP WTC Tripod 150 mm Lower RF enclosure / MU: ICP V2 WTC H/F, L/F (SOI) Electrode lift stops: 96 mm Electrode spacing: 136 mm HBC Assembly: ICP V2 TYLAN CDLD 10T Cap man gauge TYLAN FC2901 50 sccm He Cal MFC Upper electrode with aperture mounting Upper electrode source: ICP Balun Upper RF enclosure / MU: Balun 1kW (High cool) Chamber lid: ICP Heated RF Generators: Upper: ENI ACG10B 1 kW (13.56 MHz) Lower: ENI ACG3B 300 - 30 W (13.56 MHz) LF5 Pulse gen switch unit Bypass pumping: Automatic NW16 Heated foreline: ICP NW40 (1m) Pumping line EDWARDS iQDP80 (M) Backing pump Chamber heating: (4) WATLOW 700 W Cartridge heaters Gasbox: (4) lines (Includes PFC1 module) Chamber cover panels: ICP V2 Gases / MFC Size (sccm) / Seal type / Line type / Gas type C4F8(S) / 200 / VITON / G12 / Clean SF6(S) / 300 / VITON / G12 / Clean O2(S) / 100 / VITON / G12 / Clean Ar / 100 / VITON / G12 / Clean / Process Loadlock: Carousel vacuum loadlock Carousel loadlock parts: (2) Substrates, 6" EDWARDS RF Rack mount Cabinet F (Fomblin) Rotary pump Power supply: 208 V, 3 Phase, 60 Hz
    OEM 모델 설명
    The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.
    문서
    verified-listing-icon

    검증됨

    카테고리
    Dry / Plasma Etch

    마지막 검증일: 60일 이상 전

    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    134387


    웨이퍼 사이즈:

    6"/150mm, 8"/200mm


    빈티지:

    2000


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    유사 등재물
    모두 보기
    STS MULTIPLEX ICP

    STS

    MULTIPLEX ICP

    Dry / Plasma Etch
    빈티지: 2000조건: 중고
    마지막 검증일60일 이상 전

    STS

    MULTIPLEX ICP

    verified-listing-icon
    검증됨
    카테고리
    Dry / Plasma Etch
    마지막 검증일: 60일 이상 전
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    주요 품목 세부 정보

    조건:

    Used


    작동 상태:

    알 수 없음


    제품 ID:

    134387


    웨이퍼 사이즈:

    6"/150mm, 8"/200mm


    빈티지:

    2000


    Logistics Support
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    설명
    설명 없음
    환경 설정
    STS Multiplex ICP Deep Reactive Ion Etcher (DRIE), 6"-8" Semi auto mode Frequency: 600 Hz Mode: Bosch Generator rack Chiller Pump Chamber: Deep silicon etch process SOI Trench etch Gas line: (4) Valves - MFC Filters (VCR) ICP 240BF Source (ASE-exc PSU / Matching unit) Temperature: 5°C - 40°C ICP SC160M Process chamber (MESC) RF Supply / Matching unit: 300/30 W (13.56 MHz) RF Supply / Matching unit: 1 kW (13.56 MHz) Chamber parts: Substrate, 6" (Mechanical clamping) Chamber externals: ICP V2 Mechanical wafer clamp electrode (Tripod) With he backside cooling Process chamber: ICP V2 Unified ISO250 (Inc insulation spacers) SR With 160 adapter LEYBOLD MAG900CT Turbo pump EDWARDS iQDP80 (M) Dry pump Includes: EDWARDS D146 Penning gauge MKS 51A and SMC ZSE6B Pressure switches EDWARDS 655 100 mT Cap man gauge EDWARDS E2M40 PFPE vacuum pump NW16 Bypass pump line Gas box Affinity chiller Electric cluster cabinet Lower electrode: ICP WTC Tripod lift Substrate clamping / Platen: ICP WTC Tripod 150 mm Lower RF enclosure / MU: ICP V2 WTC H/F, L/F (SOI) Electrode lift stops: 96 mm Electrode spacing: 136 mm HBC Assembly: ICP V2 TYLAN CDLD 10T Cap man gauge TYLAN FC2901 50 sccm He Cal MFC Upper electrode with aperture mounting Upper electrode source: ICP Balun Upper RF enclosure / MU: Balun 1kW (High cool) Chamber lid: ICP Heated RF Generators: Upper: ENI ACG10B 1 kW (13.56 MHz) Lower: ENI ACG3B 300 - 30 W (13.56 MHz) LF5 Pulse gen switch unit Bypass pumping: Automatic NW16 Heated foreline: ICP NW40 (1m) Pumping line EDWARDS iQDP80 (M) Backing pump Chamber heating: (4) WATLOW 700 W Cartridge heaters Gasbox: (4) lines (Includes PFC1 module) Chamber cover panels: ICP V2 Gases / MFC Size (sccm) / Seal type / Line type / Gas type C4F8(S) / 200 / VITON / G12 / Clean SF6(S) / 300 / VITON / G12 / Clean O2(S) / 100 / VITON / G12 / Clean Ar / 100 / VITON / G12 / Clean / Process Loadlock: Carousel vacuum loadlock Carousel loadlock parts: (2) Substrates, 6" EDWARDS RF Rack mount Cabinet F (Fomblin) Rotary pump Power supply: 208 V, 3 Phase, 60 Hz
    OEM 모델 설명
    The STS MULTIPLEX ICP is an etch system. The STS MULTIPLEX ICP can be used with 2” wafer sizes. It has a silicon material plate and ASE polymer system processer.
    문서
    유사 등재물
    모두 보기
    STS MULTIPLEX ICP

    STS

    MULTIPLEX ICP

    Dry / Plasma Etch빈티지: 2000조건: 중고마지막 검증일:60일 이상 전
    STS MULTIPLEX ICP

    STS

    MULTIPLEX ICP

    Dry / Plasma Etch빈티지: 2001조건: 중고마지막 검증일:60일 이상 전
    STS MULTIPLEX ICP

    STS

    MULTIPLEX ICP

    Dry / Plasma Etch빈티지: 0조건: 중고마지막 검증일:60일 이상 전