설명
Epitaxial Silicon (EPI)환경 설정
Epi Centura 300 - RP (2-chamber) Applied Materials Centura 300 epitaxy system configured for reduced-pressure (RP) processing with two reactor modules Equipment front-end module with dual nitrogen-purged load ports, supporting both FOUP and open cassette handling (OCLP) Factory Interface platform revision 5.3 Wafer handling transfer chamber Magnetically driven single-blade wafer robot with integrated on-the-fly (OTF) alignment and wafer-on-blade (WOB) presence sensing Centralized pneumatic manifold distribution Dual automated batch loadlock chambers, each equipped with point-of-use vacuum pumping (iPUP) Two epitaxial process reactors Top and bottom quartz dome assemblies within each process module Upper and lower lamp heating arrays Wafer support susceptors Jet Pack air-based cooling subsystem Process exhaust routing system Low-temperature optical pyrometer instrumentation Closed-loop temperature regulation via optical pyrometry and PID control algorithms Remote structural support frame configuration Next-generation reduced-pressure gas delivery panel with integrated MFCs and automated valve control Safety systems including leak detection and interlock protection Vacuum configuration includes dedicated iPUP for the transfer module and remote high-capacity vacuum pumps for each process chamber System control computer: c300NT platform operating on Windows NT Front-end PC interface used for system control, configuration, and operator interaction with the c300NT controllerOEM 모델 설명
Applied Centura RP (reduced pressure) Epi systems.문서
문서 없음
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 6일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
150084
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
유사 등재물
모두 보기
APPLIED MATERIALS (AMAT)
CENTURA RP EPI
카테고리
Epitaxial deposition (EPI)
마지막 검증일: 6일 전
주요 품목 세부 정보
조건:
Used
작동 상태:
알 수 없음
제품 ID:
150084
웨이퍼 사이즈:
12"/300mm
빈티지:
알 수 없음
Logistics Support
Available
Transaction Insured by Moov
Available
Refurbishment Services
Available
설명
Epitaxial Silicon (EPI)환경 설정
Epi Centura 300 - RP (2-chamber) Applied Materials Centura 300 epitaxy system configured for reduced-pressure (RP) processing with two reactor modules Equipment front-end module with dual nitrogen-purged load ports, supporting both FOUP and open cassette handling (OCLP) Factory Interface platform revision 5.3 Wafer handling transfer chamber Magnetically driven single-blade wafer robot with integrated on-the-fly (OTF) alignment and wafer-on-blade (WOB) presence sensing Centralized pneumatic manifold distribution Dual automated batch loadlock chambers, each equipped with point-of-use vacuum pumping (iPUP) Two epitaxial process reactors Top and bottom quartz dome assemblies within each process module Upper and lower lamp heating arrays Wafer support susceptors Jet Pack air-based cooling subsystem Process exhaust routing system Low-temperature optical pyrometer instrumentation Closed-loop temperature regulation via optical pyrometry and PID control algorithms Remote structural support frame configuration Next-generation reduced-pressure gas delivery panel with integrated MFCs and automated valve control Safety systems including leak detection and interlock protection Vacuum configuration includes dedicated iPUP for the transfer module and remote high-capacity vacuum pumps for each process chamber System control computer: c300NT platform operating on Windows NT Front-end PC interface used for system control, configuration, and operator interaction with the c300NT controllerOEM 모델 설명
Applied Centura RP (reduced pressure) Epi systems.문서
문서 없음